FQB65N06 mosfet equivalent, 60v n-channel mosfet.
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* 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche.
such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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